1 AM3962NE preliminary publication order number: ds-AM3962NE_a analog power these miniature su rface mount mosfets utilize a high cell densit y trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) ( ? )i d (a) 0.153 @ v gs = 10v 2.3 0.185 @ v gs = 4.5v 2.1 60 product summary n-channel 60-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe tsop-6 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol limit units v ds 60 v gs 20 t a =25 o c 2.3 t a =70 o c1.9 i dm 8 i s 1.05 a t a =25 o c t a =70 o c t j , t stg o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w 1.15 0.7 -55 to 150 symbol maximum units t <= 10 sec 100 o c/ w steady-state 166 o c/w thermal resistance ratings parame te r maximum junction-to-ambient a r ja esd protected 2000v tsop-6 top view d1 s1 d2 g1 s2 g2 1 2 3 6 5 4 d 2 g 2 n-channel mosfet s 2 d 1 g 1 n-channel mosfet s 1
2 AM3962NE preliminary publication order number: ds-AM3962NE_a analog power analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. mi n t y pmax v gs = v ds , i d = 250 ua 1 v ds = 0 v, v gs = 20 v 100 v ds = 48 v, v gs = 0 v 1 v ds = 48 v, v gs = 0 v, t j = 55 o c 10 v ds = 5 v, v gs = 10 v 5 v gs = 10 v, i d = 2.3 a 0.153 v gs = 4.5 v, i d = 2.1 a 0.185 v ds = 5 v, i d = 2.3 a 10 i s = 1.05 a, v gs = 0 v 0.80 3 0.6 1.0 5 12 13 fall-time t f 7 s nc gate-drain char g e q g d dynamic b v ds =15v, v gs =4.5v, i d =2.3a diode forward volta g e a v sd total gate char g e q g specifications (t a = 25 o c unless otherwise noted) ua static test conditions v symbol parameter gate-bod y leaka g e current gate-threshold voltage v gs ( th ) limits unit on-state drain current a i d ( on ) i gss ua gate-source char g e q g s turn-on dela y time rise time ns v dd =15v, v gs =4.5v, i d =1a , r gen =15 ? turn-off dela y time t d ( on ) t r t d ( off ) forward tranconductance a g fs s ua zero gate voltage drain current i dss ? a drain-source on-resistance a r ds(on)
3 AM3962NE preliminary publication order number: ds-AM3962NE_a analog power package information tsop-6: 6lead
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